A Ku-band gold BaxSr1-xTiO3/LaAIO(3) conductor thin-film ferroelectric microstrip line phase shifter for room-temperature communications applications

Citation
Fw. Van Keuls et al., A Ku-band gold BaxSr1-xTiO3/LaAIO(3) conductor thin-film ferroelectric microstrip line phase shifter for room-temperature communications applications, MICROW OPT, 20(1), 1999, pp. 53-56
Citations number
6
Categorie Soggetti
Optics & Acoustics
Journal title
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
ISSN journal
08952477 → ACNP
Volume
20
Issue
1
Year of publication
1999
Pages
53 - 56
Database
ISI
SICI code
0895-2477(19990105)20:1<53:AKGBCT>2.0.ZU;2-J
Abstract
We report on the performance of a Ku-band gold/ Ba0.5Sr0.5TiO3/LnAlO(3) (Au /BSTO/LAO) coupled microstip line phase shifter fabricated with a 370 nm th ick BSTO film. Two hundred degrees of contiguous relative insertion phase s hift (Delta phi(S21)) with insertion losses of 4.6 dB, were measured at roo m temperature, 14.3 GHz, and maximum de voltage of 400 V. These results rep resent significant progress toward viable compact, low-loss, thin-film ferr oelectric-based phase shifters nr room temperature. (C) 1999 John Whey & So ns, Inc.