Oxygen profiling in Czochralski-grown silicon substrates submitted to a rapid thermal annealing by using charged particles activation analysis

New results concerning the physico-chemical properties of oxygen during a R apid Thermal Annealing (RTA) of Czochralski (CZ)-silicon substrates are pre sented. Considering the classical model of outdiffusion (J. Andrews, The El ectrochem. Sec., PV 83-9, Pennington, NJ (1983) 133), an enhancement of the diffusion coefficient of oxygen for a rapid thermal annealing under nitrog en ambient is confirmed. Oxygen profiling in the CZ-silicon substrates stud ied has been performed using Charged Particles Activation Analysis (CPAA). Under an hydrogenated atmosphere, the appearance of a plateau close to the surface of the wafer may be associated with the coexistence of two independ ent fluxes of oxygen, corresponding to the effect of the RTA itself and the influence of the hydrogen at the surface of the wafer, respectively. (C) 1 998 Elsevier Science B.V. All rights reserved.