QUANTITATIVE SIMULATION OF A RESONANT-TUNNELING DIODE

Quantitative simulation of an InGaAs/InAlAs resonant tunneling diode i s obtained by relaxing three of the most widely employed assumptions i n the simulation of quantum devices. These are the single band effecti ve mass model (parabolic bands), Thomas-Fermi charge screening, and th e Esaki-Tsu 1D integral approximation for current density. The breakdo wn of each of these assumptions is examined by comparing to the full q uantum mechanical calculations of self-consistent quantum charge in a multiband basis explicitly including the transverse momentum. (C) 1997 American Institute of Physics.