Epitaxy-on-electronics technology for monolithic optoelectronic integration: foundations, development, and status

Citation
Jf. Ahadian et Cg. Fonstad, Epitaxy-on-electronics technology for monolithic optoelectronic integration: foundations, development, and status, OPT ENG, 37(12), 1998, pp. 3161-3174
Citations number
40
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
OPTICAL ENGINEERING
ISSN journal
00913286 → ACNP
Volume
37
Issue
12
Year of publication
1998
Pages
3161 - 3174
Database
ISI
SICI code
0091-3286(199812)37:12<3161:ETFMOI>2.0.ZU;2-0
Abstract
Optoelectronic very large scale integrated (OE-VLSI) circuits are a basic: component of optical interconnects proposed to overcome the limitations of high-speed electrical interconnects. Epitaxy-on-electronics (EoE), a monoli thic integration technology capable of combining thousands of optoelectroni c devices with VLSI-complexity GaAs Electronics, is reviewed. The fundament al assumptions on which the EoE technology is founded are explained and the development of the EoE integration process is reviewed. Then, the recently completed OPTOCHIP research foundry project, which made LED-based optoelec tronic integrated circuits (OEICs) available to optical interconnect resear chers, is described. Finally, integrated LED, photodetector, and circuit ch aracterization results are detailed. These results show the utility of EoE OEICs in implementing optical interconnect architectures and point out curr ent performance limitations. (C) 1998 Society of Photo-Optical Instrumentat ion Engineers. [S0091-3286(98)01012-5].