3e tunneling processes in a superconducting single-electron tunneling transistor

Citation
P. Hadley et al., 3e tunneling processes in a superconducting single-electron tunneling transistor, PHYS REV B, 58(23), 1998, pp. 15317-15320
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
58
Issue
23
Year of publication
1998
Pages
15317 - 15320
Database
ISI
SICI code
0163-1829(199812)58:23<15317:3TPIAS>2.0.ZU;2-E
Abstract
A current due to a tunneling event that involves three times the charge of an electron was observed in the current-voltage characteristics of a superc onducting single-electron tunneling transistor. Ln this tunnel event, a Coo per pair tunnels through one tunnel barrier simultaneously with a quasipart icle that tunnels through a second tunnel barrier which is about 0.5 mu m d istant from the first tunnel barrier. This current was observed in a bias r egime where current flow due to sequential quasiparticle tunneling is forbi dden due to the Coulomb blockade. [S0163-1829(98)01347-2].