Interface-induced suppression of the Auger recombination in type-II InAs/GaSb superlattices

The temperature dependence of the nonequilibrium carriers lifetime has been deduced from the measurement of the photocurrent response in InAs/GaSb sup erlattices. Based on the temperature dependence of the responsivity and mod eling of the transport parameters we have found that the carrier lifetime w eakly depends on temperature in the high-temperature region. This indicates the temperature dependence of the Auger recombination rate with no thresho ld that differs it from that in the bulk material and can be attributed to the interface-induced suppression of the Auger recombination in thin quantu m wells. [S0163-1829(98)00548-7].