Vibrational modes of carbon acceptors and hydrogen-carbon pairs in semi-insulating InP doped using CCl4

Infrared absorption measurements show that high-resistivity InP grown by me tal-organic vapor phase epitaxy (MOVPE) at 500 degrees C and doped using CC l4 contains comparably high concentrations (similar to 3 x 10(18) cm(-3)) o f isolated C-p accepters and H-C-p pairs. These centers give rise to locali zed vibrational modes at 546.9 cm(-1) (C-p) and at 2703.3, 521.1, and 413.5 cm(-1) (H-C-p). A sharp weak line, also at 546.9 cm(-1), may be due to a m uch lower concentration of C-In donors. It is concluded that the doping int roduces C-p accepters that overcompensate grown-in donors and complete comp ensation results from the formation of H-C-p pairs. [S0163-1829(98)01648-8] .