Monte Carlo simulation of charge-trapped effects on dispersive electronic transient transport

Citation
A. Picos-vega et al., Monte Carlo simulation of charge-trapped effects on dispersive electronic transient transport, PHYS REV B, 58(22), 1998, pp. 14845-14851
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
58
Issue
22
Year of publication
1998
Pages
14845 - 14851
Database
ISI
SICI code
0163-1829(199812)58:22<14845:MCSOCE>2.0.ZU;2-K
Abstract
By means of the Monte Carlo technique the possible mechanism responsible fo r charge trapping at the region of photogeneration of:nonequilibrium charge , in dispersive transient transport measurements, was studied. The typical curves for dispersive transport with the effect of trapped charge were simu lated. The temperature dependence of the simulated currents and the corresp onding experimentally obtained currents, measured by the time of flight tec hnique, were compared. A good agreement between experimental and simulated results was obtained, and a model for the mechanism of charge trapping at t he photogeneration region is proposed. [S0163-1829(98)03035-8].