Electronic broadening model for high-n Balmer line profiles

a method for line profile computations of Stark broadened high principal qu antum number (PQN) Balmer series transitions is presented. Since quasistati c electron effects must be included in these cases, the traditional low den sity/low quantum number impact approximation for the electron broadening op erator cannot describe the entire profile. For the high plasma densities an d/or high principal quantum numbers (PQN>12) considered, an improved electr on broadening contribution is proposed. Using a frequency dependent electio n broadening operator, the line profile of the H Balmer n=13 transition is calculated using this electron operator and compared with profiles obtained using very accurate numerical simulations. The good agreement suggests tha t the procedure is sufficiently accurate to provide a predictive capability . [S1063-651X(98)50312-1].