Nondecay probability of the "correct" state of a memory cell: Analytic approach versus numeric simulation

Authors
Nikitenkova, SP Pankratov, AL
Citation
Sp. Nikitenkova et Al. Pankratov, Nondecay probability of the "correct" state of a memory cell: Analytic approach versus numeric simulation, PHYS REV E, 58(6), 1998, pp. 6964-6967
Citations number
15
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW E
ISSN journal
1063651X → ACNP
Volume
58
Issue
6
Year of publication
1998
Part
A
Pages
6964 - 6967
Database
ISI
SICI code
1063-651X(199812)58:6<6964:NPOT"S>2.0.ZU;2-W
Abstract
This paper presents a complete description of noise-induced transitions in a memory cell based on the parametric quantron (a superconducting ring encl osed by a Josephson junction). The time dependence of the nondecay probabil ity of the "correct" state of a memory cell is found to follow exponential behavior even for a large noise intensity compared to a potential barrier h eight. [S1063-651X(98)08310-X].