Pure dephasing induced by exciton-phonon interactions in narrow GaAs quantum wells

We investigate both dephasing and population relaxation of excitons localiz ed in quantum dot like islands in narrow GaAs quantum wells by using stimul ated photon echoes. A direct comparison of these two closely related decay processes reveals a pure dephasing contribution that dominates excitonic de phasing at elevated temperatures but does not involve exciton population re laxation. The pure dephasing contribution arises from coupling of excitonic states with a continuum of acoustic phonons and is enhanced by 3D quantum confinement. Both the magnitude and the temperature dependence of the pure dephasing rate can be described by a theoretical model that generalizes the Huang-Rhys theory of F-centers. (C) 1998 Elsevier Science Ltd. All rights reserved.