A novel resist and post-etch residue removal process using ozonated chemistry

Authors
De Gendt, S Wauters, J Heyns, M
Citation
S. De Gendt et al., A novel resist and post-etch residue removal process using ozonated chemistry, SOL ST TECH, 41(12), 1998, pp. 57
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
SOLID STATE TECHNOLOGY
ISSN journal
0038111X → ACNP
Volume
41
Issue
12
Year of publication
1998
Database
ISI
SICI code
0038-111X(199812)41:12<57:ANRAPR>2.0.ZU;2-E
Abstract
A novel, environmentally friendly process has successfully removed photores ist and organic post-etch residues from silicon surfaces. The moist ozone g as phase process described here greatly increases organic removal efficienc y and is expected to replace most sulfuric-based process steps in IC produc tion.