A novel approach for modeling accumulation-mode SOI MOSFETs

In this paper, we propose a novel complete and analytical drain current mod el for submicrometer accumulation-mode (AM) SOI MOSFETs. The analytical mod el was developed by using the drift-diffusion equation and the quasi-two-di mensional Poisson equation. The drain-induced barrier lowering, channel-len gth modulation, parasitic source/drain resistance, mobility reduction due t o the transverse field and carrier velocity saturation have been taken into consideration. In particular the diffusion current and the source and drai n resistances are explicitly expressed in the drain current equation. The r esulting single-piece model is smoothly continuous, the modeled I-V charact eristics show smooth transitions through all regions of operation and the m odeled results agree well with experimental results of AM thin film SOI MOS FETs. (C) 1998 Elsevier Science Ltd. All rights reserved.