Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's

Short-channel effects on the subthreshold behavior are modeled for fully de picted Si-SOI MESFETs through an analytical solution of the two-dimensional Poisson equation in the subthreshold region. Based on the resultant minimu m bottom potential caused by drain-induced barrier lowering, accurate analy tical expressions for short-channel threshold voltage and subthreshold swin g are derived. This model is verified by comparison to a two-dimensional de vice simulator, MEDICI, over a wide range of device parameters and bias con ditions. Good agreement is obtained for channel lengths down to 0.2 mu m. ( C) 1998 Elsevier Science Ltd. All rights reserved.