Material requirements for high voltage, high power IGBT devices

Authors
Zehringer, R Stuck, A Lang, T
Citation
R. Zehringer et al., Material requirements for high voltage, high power IGBT devices, SOL ST ELEC, 42(12), 1998, pp. 2139-2151
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
42
Issue
12
Year of publication
1998
Pages
2139 - 2151
Database
ISI
SICI code
0038-1101(199812)42:12<2139:MRFHVH>2.0.ZU;2-#
Abstract
The two basic package types of current IGBT modules. which evolved from opp osing requirements of traction and power transmission applications, are pre sented. It is shown that reliability and lifetime aspects given by traction puts most stringent limitations on the choice of materials at given cost t argets. The materials used today for high power packaging and the future de velopments of high power IGBT-packages are discussed. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.