GaN MIS diodes were demonstrated utilizing AlN and Ga2O3(Gd2O3) as insulato
rs. A 345 Angstrom of AlN was grown on the MOCVD grown n-GaN in a MOMBE sys
tem using trimethylamine alane as Al precursor and nitrogen generated from
a SVT RF N-2 plasma. For the Ga2O3(Gd2O3) growth, a multi-MBE chamber was u
sed and a 195 Angstrom oxide was E-beam evaporated from a single crystal so
urce of Ga5Gd3O12 The forward breakdown voltage of AIN and Ga2O3(Gd2O3) dio
des are 5 and 6 V, respectively, which are significantly improved over simi
lar to 1.2 V from that of a Schottky contact. From the C-V measurements, bo
th kinds of diodes showed good charge modulation From accumulation to deple
tion at different frequencies. The insulator/GaN interface roughness and th
e thickness of the insulator were measured with X-ray reflectivity. (C) 199
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