High frequency capacitance measurements on metal-insulator-semiconductor structures in thermal non-equilibrium condition

We simulate the charge carrier traffic between the energy bands and the int erface states in structures like Al/SiO2/6H-SiC, Al/diamond/Si and Al/SIPOS /Si to explain their high frequency capacitance-voltage behavior. The struc tures have in common that traditional electrical measurement techniques per formed at room temperature are prone to thermal non-equilibrium effects. Th is can result in large errors in the interface data extracted from such stu dies when thermal equilibrium conditions are assumed. In this work, high fr equency capacitance-voltage data are compared to numerical simulations whic h include such thermal non-equilibrium conditions to enable more accurate e stimates of interface state parameters in above-mentioned structures. (C) 1 998 Published by Elsevier Science Ltd. All rights reserved.