A novel technique for RTP annealing of compound semiconductors

We introduce for the first time a novel rapid thermal processing (RTP) unit called Zapper(TM), which has recently been developed by MHI Inc. and the U niversity of Florida, for high temperature thermal processing of semiconduc tors. This Zapper(TM) unit is capable of reaching much higher temperatures (>1500 degrees C) than conventional tungsten-halogen lamp RTP equipment and achieving high ramp-up and ramp-down rates. We have conducted implant acti vation annealing studies of Si+-implanted GaN thin films (with and without an AlN encapsulation layer) using the Zapper(TM) unit at temperatures up to 1500 degrees C. The electrical property measurements of such annealed samp les have led to the conclusion that high annealing temperatures and AlN enc apsulation are needed for the optimum activation efficiency of Si+ implants in GaN. It has clearly been demonstrated that the Zapper(TM) unit has trem endous potential for RTP annealing of semiconductor materials, especially f or wide band-gap (WBG) compound semiconductors that require very high proce ssing temperatures. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.