Self-propagating high-temperature synthesis and solid-phase reactions in bilayer thin films

Citation
Vg. Myagkov et al., Self-propagating high-temperature synthesis and solid-phase reactions in bilayer thin films, TECH PHYS, 43(10), 1998, pp. 1189-1192
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS
ISSN journal
10637842 → ACNP
Volume
43
Issue
10
Year of publication
1998
Pages
1189 - 1192
Database
ISI
SICI code
1063-7842(199810)43:10<1189:SHSASR>2.0.ZU;2-D
Abstract
Self-propagating high-temperature synthesis (SHS) in Al/Ni, Al/Fe, and Al/C o bilayer thin films is investigated. It is established that SHS is achieve d in thin films at initiation temperatures 300-350 degrees lower than in po wders. The mechanism of SHS in thin films is similar to the process of expl osive crystallization. It is shown that at the initial stage solid-phase re actions arising on the contact surface of condensate films can be self-prop agating high-temperature synthesis. SHS could find application in different technologies for obtaining film components for microelectronics. (C) 1998 American Institute of Physics. [S1063-7842(98)01010-1].