Silicon diffused diodes with nearly ideal current-voltage characteristics

It is shown that nearly ideal current-voltage characteristics (I-V curves) can be obtained for small-area,; shallow silicon diffused p-n junctions irr adiated with Co-60 gamma rays in the dose range 10(3)-5 x 10(5) Gy. In the irradiated diodes the current transfer mechanism is observed to shift from generation-recombination to diffusion. The nonideality factor on the forwar d branch of the I-V curve decreases from 1.68 in the unirradiated diode to 1.17 in a diode irradiated to a dose of 5 x 10(5) Gy. A saturation current is observed on the reverse branch of the I-V curves of irradiated diodes at room temperature. (C) 1998 American institute of Physics. [S1063-7842(98)0 2510-0].