GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy

Authors
Egorov, AY Zhukov, AE Kovsh, AR Ustinov, VM Mamutin, VV Ivanov, SV Zhmerik, VN Tsatsul'nikov, AF Bedarev, DA Kop'ev, PS
Citation
Ay. Egorov et al., GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy, TECH PHYS L, 24(12), 1998, pp. 942-944
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
24
Issue
12
Year of publication
1998
Pages
942 - 944
Database
ISI
SICI code
1063-7850(199812)24:12<942:GAIHGB>2.0.ZU;2-6
Abstract
Molecular beam epitaxy was used to fabricate GaAsN/GaAs and InGaAsN/GaAs he terostructures, and the influence of the growth regimes on their characteri stics was studied. It is shown that implantation of nitrogen causes a subst antial long-wavelength shift of the radiation. The possibility of obtaining 1.4 mu m radiation at room temperature was demonstrated using In0.28Ga0.72 As0.97N0.03/GaAs quantum wells. (C) 1998 American Institute of Physics. [S1 063-7850(98)01512-2].