Md. Kriese et al., Effects of annealing and interlayers on the adhesion energy of copper thinfilms to SiO2/Si substrates, ACT MATER, 46(18), 1998, pp. 6623-6630
The adhesion of sputtered copper thin films was measured with a quantitativ
e indentation technique utilizing refractory superlayers to trigger and pro
mote delamination. Adhesion energies of the indentation-induced delaminatio
ns were analyzed in terms of the critical strain energy release rate. Two g
roups of films were investigated. Group I ranged in thickness from 225 to 1
000 nm in both the as-deposited and annealed condition. Adhesion enemies ra
nged from 2 to 15 J/m(2), with higher adhesion for the annealed condition.
Group II films had nominal thicknesses of 430 and 1100 nm, some with 7-10 n
m interlayers of either titanium or chromium. Adhesion energies of these fi
lms ranged from 4 to 30 J/m(2), increasing by a factor from 1.3 to 7.5, as
a function of the interlayer presence and type with the increase in energy
due to a chromium interlayer exceeding that of titanium. Adhesion energies
increased with film thickness for all films, with interlayers and annealing
producing a larger increase. These quantitative results were compared to p
revious semi-quantitative and quantitative results, and shown to have compa
rable magnitudes and trends. (C) 1998 Acta Metallurgica Inc. Published by E
lsevier Science Ltd. All rights reserved.