Effects of annealing and interlayers on the adhesion energy of copper thinfilms to SiO2/Si substrates

Citation
Md. Kriese et al., Effects of annealing and interlayers on the adhesion energy of copper thinfilms to SiO2/Si substrates, ACT MATER, 46(18), 1998, pp. 6623-6630
Citations number
35
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science",Metallurgy
Journal title
ACTA MATERIALIA
ISSN journal
13596454 → ACNP
Volume
46
Issue
18
Year of publication
1998
Pages
6623 - 6630
Database
ISI
SICI code
1359-6454(19981120)46:18<6623:EOAAIO>2.0.ZU;2-S
Abstract
The adhesion of sputtered copper thin films was measured with a quantitativ e indentation technique utilizing refractory superlayers to trigger and pro mote delamination. Adhesion energies of the indentation-induced delaminatio ns were analyzed in terms of the critical strain energy release rate. Two g roups of films were investigated. Group I ranged in thickness from 225 to 1 000 nm in both the as-deposited and annealed condition. Adhesion enemies ra nged from 2 to 15 J/m(2), with higher adhesion for the annealed condition. Group II films had nominal thicknesses of 430 and 1100 nm, some with 7-10 n m interlayers of either titanium or chromium. Adhesion energies of these fi lms ranged from 4 to 30 J/m(2), increasing by a factor from 1.3 to 7.5, as a function of the interlayer presence and type with the increase in energy due to a chromium interlayer exceeding that of titanium. Adhesion energies increased with film thickness for all films, with interlayers and annealing producing a larger increase. These quantitative results were compared to p revious semi-quantitative and quantitative results, and shown to have compa rable magnitudes and trends. (C) 1998 Acta Metallurgica Inc. Published by E lsevier Science Ltd. All rights reserved.