MODELING OF THE GROWTH OF HYDRATED AMORPH OUS-SILICON FROM UF DISCHARGE PLASMA

Authors
GORBACHEV YE ZETEVAKHIN MA KAGANOVICH ID
Citation
Ye. Gorbachev et al., MODELING OF THE GROWTH OF HYDRATED AMORPH OUS-SILICON FROM UF DISCHARGE PLASMA, Zurnal tehniceskoj fiziki, 66(12), 1996, pp. 89-110
Citations number
26
Categorie Soggetti
Physics, Applied
Journal title
Zurnal tehniceskoj fiziki → ACNP
ISSN journal
00444642
Volume
66
Issue
12
Year of publication
1996
Pages
89 - 110
Database
ISI
SICI code
0044-4642(1996)66:12<89:MOTGOH>2.0.ZU;2-K