ARSENIDE-GALLIUM PHOTOCATHODE BASED ON AL GAAS P+-GAAS/ALGAAS HETEROEPITAXIAL STRUCTURES GROWN BY THE MOLECULAR-RAY EPITAXY METHOD/

Authors
SAKHNO VI DOLGIKH AV CHUBAREV VG MARAKHOVKA II GALITSYN YG MANSUROV VG SURANOV AS
Citation
Vi. Sakhno et al., ARSENIDE-GALLIUM PHOTOCATHODE BASED ON AL GAAS P+-GAAS/ALGAAS HETEROEPITAXIAL STRUCTURES GROWN BY THE MOLECULAR-RAY EPITAXY METHOD/, Pis'ma v Zurnal tehniceskoj fiziki, 22(23), 1996, pp. 64-68
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Pis'ma v Zurnal tehniceskoj fiziki → ACNP
ISSN journal
03200116
Volume
22
Issue
23
Year of publication
1996
Pages
64 - 68
Database
ISI
SICI code
0320-0116(1996)22:23<64:APBOAG>2.0.ZU;2-G