An InP HEMT MMIC LNA with 7.2-dB gain at 190 GHz

We present the highest frequency performance of any solid-state monolithic microwave integrated circuit (MMIC) amplifier. A 2-stage 80-nm gate length InGaAs/InAlAs/InP HEMT MMIC balanced amplifier has a measured on-wafer peak gain of 7.2 dB at 190 GHz and greater than 5 dB gain from 170 to 194 GHz, The circuit was fabricated using a pseudomorphic 20-nm In0.65Ga0.35As chann el HEMT structure grown on a 3-in InP substrate by MBE. Based on the measur ed circuit results, the intrinsic exhibits an F-max greater than 400 GHz.