Comparison of coplanar 60-GHz low-noise amplifiers based on a GaAs PM-HEMTtechnology

Citation
A. Bessemoulin et al., Comparison of coplanar 60-GHz low-noise amplifiers based on a GaAs PM-HEMTtechnology, IEEE MICR G, 8(11), 1998, pp. 396-398
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE MICROWAVE AND GUIDED WAVE LETTERS
ISSN journal
10518207 → ACNP
Volume
8
Issue
11
Year of publication
1998
Pages
396 - 398
Database
ISI
SICI code
1051-8207(199811)8:11<396:COC6LA>2.0.ZU;2-N
Abstract
For use in low-noise receivers of communication or radar systems, three dif ferent two-stage amplifiers for 60 GHz, using a 0.15-mu m PM-HEMT technolog y on GaAs, have been compared in terms of gain and noise figure. The amplif iers realized in coplanar waveguide technology (CPW) differ in the matching networks of the two stages, optimized either for low-noise or maximum gain bias condition. At 59 GHz, a minimum noise figure of 3.0 dB with an associ ated gain of 9.3 dB and a maximum gain of 12.2 dB with a noise figure of 3. 8 dB were achieved.