A 95-GHz InP HEMT MMIC amplifier with 427-mW power output

Authors
Chen, YC Ingram, DL Lai, R Barsky, M Grunbacher, R Block, T Yen, HC Streit, DC
Citation
Yc. Chen et al., A 95-GHz InP HEMT MMIC amplifier with 427-mW power output, IEEE MICR G, 8(11), 1998, pp. 399-401
Citations number
14
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE MICROWAVE AND GUIDED WAVE LETTERS
ISSN journal
10518207 → ACNP
Volume
8
Issue
11
Year of publication
1998
Pages
399 - 401
Database
ISI
SICI code
1051-8207(199811)8:11<399:A9IHMA>2.0.ZU;2-R
Abstract
We have established a state-of-the-art InGaAs-InAlAs-InP HEMT MMIC fabricat ion process for millimeterwave high-power applications, A two-stage monolit hic microwave integrated circuit (MMIC) power amplifier with 0.15-mu m gate length and 1.28-mm output periphery fabricated using this process has demo nstrated an output power of 427 mW with 19% power-added efficiency at 95 GH z, To our knowledge, this is the highest output power ever reported at this frequency for any solid-state MMIC amplifier.