Electric currents through ion tracks in silicon devices

A modified form of Ohm's law, describing electric currents through ion trac ks, is presented as a tool for future theoretical modeling efforts related to charge collection from ion tracks in silicon devices. The equation is ri gorously derived from the drift/diffusion equations and accounts for all cu rrents (electron and hole, drift, and diffusion). While only one quantitati ve result is given, a fairly complete description of charge collection from ion tracks in silicon diodes is qualitatively discussed.