Threshold voltage stabilization in radiation environments

Authors
Kerns, DV Barnaby, HJ Kerns, SE
Citation
Dv. Kerns et al., Threshold voltage stabilization in radiation environments, IEEE NUCL S, 45(6), 1998, pp. 3175-3178
Citations number
2
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
45
Issue
6
Year of publication
1998
Part
3
Pages
3175 - 3178
Database
ISI
SICI code
0018-9499(199812)45:6<3175:TVSIRE>2.0.ZU;2-4
Abstract
CMOS circuit hardness to total ionizing dose is improved by a circuit techn ique that dynamically adjusts well and/or substrate;voltages to maintain co nstant device threshold voltages. Threshold voltage excursions below a refe rence value activate an oscillator driving a charge pump. Stabilization is demonstrated experimentally. Techniques for optimizing the circuitry for va rious CMOS technology implementations are provided and supported with simul ations.