Microscopic mechanisms of radiation-induced proton density decay in SiO2 films

Citation
Sp. Karna et al., Microscopic mechanisms of radiation-induced proton density decay in SiO2 films, IEEE NUCL S, 45(6), 1998, pp. 2408-2412
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
45
Issue
6
Year of publication
1998
Part
1
Pages
2408 - 2412
Database
ISI
SICI code
0018-9499(199812)45:6<2408:MMORPD>2.0.ZU;2-1
Abstract
In order to understand the physics of radiation-induced proton density deca y in thin SiO2 films, we performed ab initio Hartree-Fock calculations of t he potential energy curves for the interaction between model oxide clusters and H in two charge states. The calculated results led to two separate pro posed mechanisms for proton density decay in thin SiO2 films: (1) electroni c excitation involving hot phonon levels of the ground electronic state at low photon-energy radiation and (2) electron capture by protons at high pho ton-energy radiation. The proposed mechanisms qualitatively explain recent experimental observations.