Total dose radiation hard 0.35 mu m SOI CMOS technology

This paper presents the total dose radiation performance of 0.35 mu m SOI C MOS devices fabricated in a radiation hard full dose SIMOX technology. The radiation performance is characterized by transistor threshold voltage shif ts, transistor array leakage currents, and 256K SRAM standby currents as a function of total dose up to 10 Mrad(SiO2). The worst case threshold voltag e shifts of front channels are less than 60 mV for PMOS transistors at 1 Mr ad(SiO2) and less than 10 mV for NMOS transistors. No significant radiation induced leakage currents are observed in small transistor arrays to 10 Mra d(SiO2). Standby currents of 256K SRAMs are less than the 1.5 mA specificat ion over the total dose range of 1 Mrad(SiO2). The results suggest high den sity SRAMs and ASIC fabricated in this technology will perform well in hars h radiation environment.