A study of the radiation sensitivity of non-crystalline SiO2 films using spectroscopic ellipsometry

Citation
Bj. Mrstik et al., A study of the radiation sensitivity of non-crystalline SiO2 films using spectroscopic ellipsometry, IEEE NUCL S, 45(6), 1998, pp. 2450-2457
Citations number
31
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
45
Issue
6
Year of publication
1998
Part
1
Pages
2450 - 2457
Database
ISI
SICI code
0018-9499(199812)45:6<2450:ASOTRS>2.0.ZU;2-9
Abstract
Dry thermal oxides were grown on Si substrates at temperatures from 900 deg rees C to 1200 degrees C. Portions of these oxides were then annealed for 1 0 min at temperatures from 900 degrees C to 1125 degrees C. Spectroscopic e llipsometry was used to determine the density of these oxides, and to look for the existence of an interfacial layer. It was found that the oxide dens ity depends on both the growth temperature and the anneal temperature. No e vidence was found of an interfacial layer. The oxides were then irradiated with x-rays, and the radiation-induced shift of the flatband voltage was de termined. It was found that the radiation response was related to the oxide density determined by spectroscopic ellipsometry. These results suggest th at the macroscopic structure of the oxide influences the extent of charge t rapping.