Single-event burnout of epitaxial bipolar transistors

Authors
Kuboyama, S Sugimoto, K Shugyo, S Matsuda, S Hirao, T
Citation
S. Kuboyama et al., Single-event burnout of epitaxial bipolar transistors, IEEE NUCL S, 45(6), 1998, pp. 2527-2533
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
45
Issue
6
Year of publication
1998
Part
1
Pages
2527 - 2533
Database
ISI
SICI code
0018-9499(199812)45:6<2527:SBOEBT>2.0.ZU;2-R
Abstract
Single-Event Burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs, including small signal transistors, with thinner epitaxial layers were inherently su sceptible to the SEE phenomenon. It was demonstrated that several design pa rameters of BJTs were responsible for SEE susceptibility. Additionally, des tructive and nondestructive modes of SEB were identified.