SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain

Authors
Roche, P Palau, JM Belhaddad, K Bruguier, G Ecoffet, R Gasiot, J
Citation
P. Roche et al., SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain, IEEE NUCL S, 45(6), 1998, pp. 2534-2543
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
45
Issue
6
Year of publication
1998
Part
1
Pages
2534 - 2543
Database
ISI
SICI code
0018-9499(199812)45:6<2534:SROAES>2.0.ZU;2-S
Abstract
The first SEU response of a complete 3-D SRAM cell is presented. This simul ation method allows to verify the accuracy of the commonly used mixed-mode technique and to study coupling effects between different junctions of the cell.