Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics

The entire current transient induced by single 12-MeV Carbon ions was measu red at a 5GHz analog bandwidth. A focused ion micro-beam was used to acquir e multiple single ion transients at multiple locations of a single CMOS tra nsistor. The current transients reveal clear and discernible contributions of drift and diffusive charge collection. Transients measured for drain and off-drain ion strikes compare well to 3D DAVINCI calculations. The simulat ions match the drift charge collection measurements within experimental err ors. Estimates are presented for the drift assisted funneling charge collec tion depth.