Technique to measure an ion track profile

Authors
Musseau, O Ferlet-Cavrois, V Campbell, AB Knudson, AR Buchner, S Fischer, B Schlogl, M
Citation
O. Musseau et al., Technique to measure an ion track profile, IEEE NUCL S, 45(6), 1998, pp. 2563-2570
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
45
Issue
6
Year of publication
1998
Part
1
Pages
2563 - 2570
Database
ISI
SICI code
0018-9499(199812)45:6<2563:TTMAIT>2.0.ZU;2-8
Abstract
Effects of the radial density distribution of carriers generated in a singl e ion track have been observed in thin silicon detectors. These devices hav e been irradiated with either an ion microbeam at low energy or a high-ener gy standard ion beam. We describe the mode of operation of the tested struc ture, and propose an interpretation of the experimental charge collection d ata to extract information on the ion track profile. Experimental results a re compared to 3D simulations and simplified analytical profiles.