Enhanced low-dose-rate sensitivity of a low-dropout voltage regulator

Ionization-induced degradation of the 29372 low-dropout voltage regulator i s most severe at low-dose-rate (similar to 10 mrad(SiO2)/s) and zero load c urrent. The most sensitive parameter is the maximum output drive current, w hich is a function of the gain of the large lateral pnp output transistor. Significant degradation of this parameter occurs at 5-10 krad(SiO2) at low- dose-rate. A moderate load current (similar to 250mA) during irradiation si gnificantly mitigates the damage. The mitigation of the damage is proportio nal to irradiation load current and is not a strong function of irradiation temperature or input voltage. The mechanism for the mitigation of damage a ppears to be current density dependent passivation of interface and/or bord er traps by mobile hydrogen-related species. The worst-case space system ap plication is in unbiased spares.