Total dose effects on gate controlled lateral PNP bipolar junction transistors

Authors
Cazenave, P Fouillat, P Montagner, X Barnaby, H Schrimpf, RD Bonora, L David, JP Touboul, A Calvet, MC Calvel, P
Citation
P. Cazenave et al., Total dose effects on gate controlled lateral PNP bipolar junction transistors, IEEE NUCL S, 45(6), 1998, pp. 2577-2583
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
45
Issue
6
Year of publication
1998
Part
1
Pages
2577 - 2583
Database
ISI
SICI code
0018-9499(199812)45:6<2577:TDEOGC>2.0.ZU;2-V
Abstract
A gate controlled lateral PNP bipolar device has been designed in a commerc ial BiCMOS process to investigate its sensitivity to radiation-induced degr adation. New experimental and simulated results concerning total dose effec ts are presented. The improved radiation hardness of this device working in its accumulation mode is shown. The influence of the gate potential during irradiation is studied as well as the effect of the gate potential on the degraded current characteristics.