TCAD-assisted analysis of back-channel leakage in irradiated mesa SOI nMOSFETs

Authors
Milanowski, RJ Pagey, MP Massengill, LW Schrimpf, RD Wood, ME Offord, BW Graves, RJ Galloway, KF Nicklaw, CJ Kelley, EP
Citation
Rj. Milanowski et al., TCAD-assisted analysis of back-channel leakage in irradiated mesa SOI nMOSFETs, IEEE NUCL S, 45(6), 1998, pp. 2593-2599
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
45
Issue
6
Year of publication
1998
Part
1
Pages
2593 - 2599
Database
ISI
SICI code
0018-9499(199812)45:6<2593:TAOBLI>2.0.ZU;2-7
Abstract
Enhanced back-channel leakage in a mesa SOI device architecture is analyzed . Using integrated process, device, and hole trapping simulation, the cause of the leakage enhancement is identified as enhanced hole trapping in the buried oxide near the island edge. Simulation results suggest this edge eff ect may be mitigated using body-tied-to-source tabs at the edge of the isla nd. The potential performance and manufacturing impacts of this measure are discussed.