Proton damage effects in linear integrated circuits

Proton tests of linear integrated circuits have identified devices where si gnificantly more damage occurs at equivalent total dose levels with protons than with gamma rays. The difference is attributed to displacement damage, and it can be important for hardened devices as well as for unhardened tec hnologies. Proton testing may be required for applications of circuits that use substrate and lateral pnp transistors in critical circuit functions wh ere protons comprise a significant fraction of the space environment.