The results of a detailed study of the degradation of commercial linear bip
olar ICs due to irradiation at four dose rates are presented. The time depe
ndence of the degradation rate at the different dose rates is shown to be c
onsistent with a model that describes a mechanism for defect generation in
the devices used in this study. Based on this model, an accelerated test pr
ocedure for bipolar devices is proposed.