Study of low-dose-rate radiation effects on commercial linear bipolar ICs

Citation
Rk. Freitag et Db. Brown, Study of low-dose-rate radiation effects on commercial linear bipolar ICs, IEEE NUCL S, 45(6), 1998, pp. 2649-2658
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
45
Issue
6
Year of publication
1998
Part
1
Pages
2649 - 2658
Database
ISI
SICI code
0018-9499(199812)45:6<2649:SOLREO>2.0.ZU;2-T
Abstract
The results of a detailed study of the degradation of commercial linear bip olar ICs due to irradiation at four dose rates are presented. The time depe ndence of the degradation rate at the different dose rates is shown to be c onsistent with a model that describes a mechanism for defect generation in the devices used in this study. Based on this model, an accelerated test pr ocedure for bipolar devices is proposed.