Jl. Titus et al., First observations of enhanced low dose rate sensitivity (ELDRS) in space:One part of the MPTB experiment, IEEE NUCL S, 45(6), 1998, pp. 2673-2680
Bipolar devices, most notably circuits fabricated with lateral PNP transist
ors (LPNP) and substrate PNP transistors (SPNP), have been observed to exhi
bit an enhanced low dose rate sensitivity when exposed to ionizing radiatio
n. These dose rate sensitive bipolar devices exhibited enhanced degradation
of base current in transistors and of input bias current, offset current,
and/or offset voltage in linear circuits at dose rates less than 0.1 rd(Si)
/s) compared to devices irradiated at dose rates greater than 1 rd(Si)/s).
The total dose responses of several bipolar transistors and linear circuits
in a space environment are demonstrated to exhibit enhanced degradation co
mparable, in magnitude, to ground-based data irradiated at a dose rate of 1
0 mrd(Si)/s indicating that enhanced low dose rate sensitivities (ELDRS) do
indeed exist in space.