First observations of enhanced low dose rate sensitivity (ELDRS) in space:One part of the MPTB experiment

Citation
Jl. Titus et al., First observations of enhanced low dose rate sensitivity (ELDRS) in space:One part of the MPTB experiment, IEEE NUCL S, 45(6), 1998, pp. 2673-2680
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
45
Issue
6
Year of publication
1998
Part
1
Pages
2673 - 2680
Database
ISI
SICI code
0018-9499(199812)45:6<2673:FOOELD>2.0.ZU;2-R
Abstract
Bipolar devices, most notably circuits fabricated with lateral PNP transist ors (LPNP) and substrate PNP transistors (SPNP), have been observed to exhi bit an enhanced low dose rate sensitivity when exposed to ionizing radiatio n. These dose rate sensitive bipolar devices exhibited enhanced degradation of base current in transistors and of input bias current, offset current, and/or offset voltage in linear circuits at dose rates less than 0.1 rd(Si) /s) compared to devices irradiated at dose rates greater than 1 rd(Si)/s). The total dose responses of several bipolar transistors and linear circuits in a space environment are demonstrated to exhibit enhanced degradation co mparable, in magnitude, to ground-based data irradiated at a dose rate of 1 0 mrd(Si)/s indicating that enhanced low dose rate sensitivities (ELDRS) do indeed exist in space.