Electrical performance and radiation sensitivity of stacked PMOS dosimeters under bulkbias control

A new method for biasing stacked PMOS dosimeters has shown the potential fo r increased radiation dose range. This method involves control of the outpu t voltage of stacked depletion mode RADFETs by an appropriate bulkbias. Rad iation sensitivity measurement has shown impressive results where 84mV/rad sensitivity has been demonstrated. The possibility of a Zero Temperature Co efficient (ZTC) bulkbias may also prove attractive. Simulation and measurem ent are in close agreement indicating that proposed device geometry changes should further reduce the output voltage while maintaining milli-rad radia tion sensitivity capability. Simulation shows that radiation sensitivity of up to 120mV/rad can be achieved with proposed Width/Length (W/L) device ge ometry changes.