Surface micromachined comb drive and microengine fluence thresholds and fai
lure modes were investigated in x-ray, electron, and proton total-dose envi
ronments. Very high electron, and proton total-dose environments. Very high
fluence levels were necessary to induce motion degradation or lockup for n
ormal device biasing or operation. For the abnormal biasing of ungrounded o
r partially grounded dice, significantly lower fault thresholds were observ
ed, but still in a medium or high fluence range.