Proton-induced transient effects in a metal-semiconductor-metal (MSM) photodetector for optical-based data transfer

We present a study of proton transient effects in metal-semiconductor-metal (MSM) photodetectors, which demonstrates their inherent advantage for mini mizing Single Event Effects (SEEs) in proton environments. Upset mechanisms are characterized for 830 nm GaAs and 1300 nm InGaAs detectors. Only proto ns incident at grazing angles are likely to cause a bit errors by direct io nization. The MSM technology appears to be a more robust to single bit erro rs than thicker 1300 nm p-i-n diode structures which we have previously sho wn to be susceptible to errors from direct ionization events at all angles, and also at relatively high optical powers [1]. For a given receiver, the relative contributions of direct ionization and n uclear reaction upset mechanisms at a specific data rate and optical power are determined by the geometry of the charge collection volume of the detec tor. We show that state-of-the-art p-i-n detectors can also display a reduc ed sensitivity to direct ionization by incident protons except at grazing a ngles.