Resonant valence-band satellites at the Ni-3p edge of Ni3Al, Ni3Ga and Ni3In

Valence-band photoemission sspectra of Ni3Al, Ni3Ga and Ni3In were measured with synchrotron radiation at photon energies around the Ni-3p core excita tion threshold. The valence-band satellites are resonantly enhanced. The nu mber of holes per Ni atom in the Ni-d band for Ni3Al, Ni3Ga and Ni3In is es timated to be 0.37, 0.30 and 0.34, respectively. The self-energy correction due to the configuration interaction is 0.72, 0.71 and 0.72 eV, respective ly, for Ni3Al, Ni3Ga and Ni3In. The Fano parameters and the effective Coulo mb interactions between two 3D holes for these intermetallic compounds are determined.