Transient analysis of LE-VGF growth of compound semiconductors

A finite difference simulation for the bulk single crystal growth of indium phosphide by the liquid encapsulated vertical gradient freezing (LE-VGF) m ethod with a flat bottom crucible is presented. In order to treat a curvatu re interface, the boundary fixing method is applied. The transient behavior of the flow and temperature fields, the melt/crystal interface shape and t he growth rate during growth are studied numerically. The crystal growth ra te is not constant although the temperature lowering rate is constant The e ffect of crucible thickness, thermal conductivity of the crucible and tempe rature of the growth furnace wall on the crystal growth behavior are discus sed.