Analysis on the effect of metal penetrating depth into the anisotropic substrate in a shielded microstripline

Citation
Ip. Hong et al., Analysis on the effect of metal penetrating depth into the anisotropic substrate in a shielded microstripline, INT J RF MI, 9(1), 1999, pp. 49-53
Citations number
15
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING
ISSN journal
10964290 → ACNP
Volume
9
Issue
1
Year of publication
1999
Pages
49 - 53
Database
ISI
SICI code
1096-4290(199901)9:1<49:AOTEOM>2.0.ZU;2-1
Abstract
This article describes the quasistatic analysis of a shielded microstriplin e with finite metallization thickness penetrating into the anisotropic subs trate. A vertical directional mode-matching method, which includes eigenfun ctions with inhomogeneous properties for analyzing this structure, has been used. This method not only provides a simple and fast approach to the quas istatic analysis of inhomogeneous structures, but also can be applied to an alyze the effect of metal penetration into the anisotropic substrate. The r esults show that the characteristic impedances of a shielded microstripline can be represented as a function of the ship width, the metal thickness, a nd the metal penetrating depth into the substrate. (C) 1999 John Wiley & So ns, Inc.