Subquarter-micrometer dual gate complementary metal oxide semiconductor field effect transistor with ultrathin gate oxide of 2 nm

The high performance of 0.25 mu m dual gate complementary metal oxide semic onductor with an ultrathin gate oxide of 2 nm is demonstrated for low-volta ge logic applications. Boron penetration can be effectively suppressed by t he nitrogen implantation technique, even if the gate oxide film is reduced to 2 nm. It is confirmed that N-channel and P-channel metal oxide semicondu ctor field effect transistors (MOSFETs) with high current drivability can b e realized by the thin gate oxide, although the transconductance is not inv ersely proportional to the gate oxide thickness due to the increase in the effect of the inversion capacitance and the gate depletion. The inverter de lay Lime with the aluminum interconnect load is markedly improved by the hi ghly drivable MOSFETs with thin gate oxide, especially at low-voltage opera tion. Furthermore, hot carrier degradation of N-channel MOSFETs can be supp ressed by reducing the gate oxide thickness. However, it was found that the hot carrier degradation of P-channel MOSFETs is enhanced in the thin gate oxide region under channel hot hole injection.