Quasi-CW room temperature operation of 1.52 mu m InGaAsP/AlGaAs vertical cavity lasers obtained by localised fusion

1.52 mu m double fused InGaAsP/AlGaAs vertical cavity surface emitting lase rs with in-situ built-in lateral current confinement were fabricated using localised wafer fusion process. These devices operate at room temperature i n quasi-CW regime at 10% duty cycle. Operation characteristics of these las ers are limited by the high resistivity of p-InP/p-GaAs fused junctions whi ch is a result of using carbon-doped p-AlGaAs/GaAs distributed Bragg-mirror s.